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Silicon-on-sapphire integrated waveguides for the mid-infrared
Tom Baehr-Jones1, Alexander Spott, Rob Ilic
1Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle WA 98195-2500 USA.
Optics Express
|July 1, 2010
Summary
Researchers demonstrate practical mid-infrared silicon waveguides for the first time. This breakthrough enables new applications by enabling waveguiding at 4.5 micrometers with low losses.
Area of Science:
- Photonics
- Materials Science
- Integrated Optics
Background:
- Silicon waveguides are established for near-infrared applications (1.1-2.2 microm).
- Achieving low-loss silicon waveguides at longer, mid-infrared wavelengths has been experimentally challenging.
Purpose of the Study:
- To demonstrate the feasibility of integrated silicon-on-sapphire waveguides for mid-infrared wavelengths.
- To characterize the performance and losses of these waveguides at 4.5 micrometers.
Main Methods:
- Fabrication of single-mode silicon-on-sapphire waveguides.
- Experimental demonstration of waveguiding at 4.5 micrometers.
- Loss measurement of the fabricated waveguides.
Main Results:
- Successful waveguiding demonstrated at a mid-infrared wavelength of 4.5 micrometers (2222.2 cm(-1)).
- Measured propagation losses of 4.3 +/- 0.6 dB/cm were achieved.
- This represents the first practical integrated silicon waveguide system for the mid-infrared spectrum.
Conclusions:
- Integrated silicon-on-sapphire waveguides are viable for mid-infrared applications.
- This technology opens up new possibilities for devices operating in the mid-infrared range.
- Enables novel applications in sensing, spectroscopy, and optical communications.
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