Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step

We demonstrate a technique to fabricate memristor cross-point arrays using a self-aligned, one step nanoimprint lithography process that simultaneously patterns the bottom electrode, switching material film and the top electrode. Since this process does not require overlay alignment, the fabrication complexity is greatly reduced and the throughput is significantly increased. The critical interfaces are exposed to much less contamination and thus under better chemical control. With this technique, we fabricated arrays of TiO(2)-based memristive devices (junction area 100 nm by 100 nm) that did not require electrical forming and were operated with nanoampere currents.