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Published on: April 12, 2019
Magnetoresistance in Sn-Doped In2O3Nanowires
Olívia M Berengue1, Alexandrejc Lanfredi, Livia P Pozzi
1Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil. oliberengue@yahoo.com.br.
Abstract:
In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
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