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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon Nanonets

Linhan Lin1, Dexing Li, Jiayou Feng

  • 1Department of Materials Science and Engineering, Key Lab of Advanced Materials, Tsinghua University, Beijing, 100084 China.

Nanoscale Research Letters
|July 3, 2010
PubMed

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