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Published on: June 18, 2013
Field Emission of ITO-Coated Vertically Aligned Nanowire Array.
Changhwa Lee1, Seokwoo Lee, Seung S Lee
1Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea. swlee81@kaist.ac.kr.
Nanoscale Research Letters
|July 3, 2010
Summary
Researchers fabricated indium tin oxide (ITO)-coated vertically aligned nanowire arrays for field emission. The ITO-coated nanowire array shows excellent field emission properties, making it ideal for field emitters.
Area of Science:
- Materials Science
- Nanotechnology
- Physics
Background:
- Vertically aligned nanowire arrays are promising field emitters due to their orientation.
- Indium tin oxide (ITO) is a conductive material suitable for coating nanostructures.
Purpose of the Study:
- To fabricate and investigate the field emission characteristics of ITO-coated vertically aligned nanowire arrays.
- To evaluate the performance of these arrays as field emitters.
Main Methods:
- Fabrication of vertically aligned nanowire arrays using modified UV lithography.
- Coating the arrays with a 0.1-μm-thick layer of ITO.
- Measuring field emission properties using a nanomanipulator in a scanning electron microscope.
Main Results:
- The ITO-coated nanowire array exhibited a low turn-on electric field intensity of approximately 2.0 V/μm.
- A high field enhancement factor (β) of approximately 3,078 was achieved at a 0.6 μm gap.
- The structure demonstrated effective field emission capabilities.
Conclusions:
- ITO-coated vertically aligned nanowire arrays are highly effective field emitters.
- The fabricated structure shows potential for applications requiring efficient electron emission.
- The study validates the suitability of ITO-coated nanowires for advanced electronic devices.
