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Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
Measurements of Strain01:27

Measurements of Strain

Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Elastic strain tensor measurement using electron backscatter diffraction in the SEM.

David J Dingley1, Angus J Wilkinson, Graham Meaden

  • 1Department of Physics, Bristol University, Bristol, UK. djdingley@hotmail.com

Journal of Electron Microscopy
|July 17, 2010
PubMed
Summary
This summary is machine-generated.

Electron backscatter diffraction (EBSD) now measures elastic strain by comparing crystal patterns. This technique achieves high sensitivity for detailed material analysis in scanning electron microscopy (SEM).

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Area of Science:

  • Materials Science
  • Crystallography
  • Analytical Chemistry

Background:

  • Electron Backscatter Diffraction (EBSD) is a standard Scanning Electron Microscopy (SEM) technique for crystallographic analysis.
  • Measuring elastic strain in materials is crucial for understanding mechanical behavior and failure mechanisms.

Purpose of the Study:

  • To adapt the established EBSD technique for precise elastic strain measurement.
  • To develop a method for quantifying strain distribution within crystalline materials.

Main Methods:

  • Adapted EBSD to compare crystallographic features (e.g., zone axes) in strained versus unstrained crystal regions.
  • Utilized cross-correlation of selected regions within EBSD patterns to detect feature displacement.
  • Determined eight components of the strain tensor directly and calculated the ninth using boundary conditions.

Main Results:

  • Achieved a displacement measurement sensitivity of 1 part in 10,000.
  • Demonstrated a strain sensitivity of 2 parts in 10,000.
  • Successfully applied the method to analyze strain around a fracture in germanium, a precipitate in a nickel-based alloy, and grain boundaries.

Conclusions:

  • The adapted EBSD technique provides a highly sensitive method for elastic strain measurement.
  • This approach enables detailed mapping of strain distributions in various material systems.
  • The findings have implications for materials characterization, failure analysis, and alloy development.