Scanning Electron Microscopy
Measurements of Strain
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Updated: Jun 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
David J Dingley1, Angus J Wilkinson, Graham Meaden
1Department of Physics, Bristol University, Bristol, UK. djdingley@hotmail.com
Electron backscatter diffraction (EBSD) now measures elastic strain by comparing crystal patterns. This technique achieves high sensitivity for detailed material analysis in scanning electron microscopy (SEM).
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