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Updated: Jun 10, 2026

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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Nanotrench for nano and microparticle electrical interconnects.
J-F Dayen1, V Faramarzi, M Pauly
1IPCMS-Department of Magnetic Objects on the Nanoscale, 23 rue du Loess BP 43, F-67034, Strasbourg Cedex 2, France. jean-francois.dayen@ipcms.u-strasbg.fr
Nanotechnology
|July 28, 2010
Summary
We developed a scalable optical lithography method for fabricating high aspect ratio electrical interconnects. This technique enables precise nanoscale connections for micro/nanoparticle manipulation and electrical characterization of resistive materials.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Fabricating high aspect ratio electrical interconnects with nanoscale precision is challenging.
- Scalable and industrially relevant methods are needed for advanced microelectronic applications.
Purpose of the Study:
- To present a versatile patterning procedure for reliable fabrication of high aspect ratio electrical interconnects.
- To demonstrate the utility of these interconnects for micro/nanoparticle addressing and electrical property measurements.
Main Methods:
- Utilized standard optical lithography techniques for patterning.
- Fabricated high aspect ratio (10^4) nanotrenches with separation distances down to 20 nm.
- Integrated micro/nanoparticles within fabricated circuits.
Main Results:
- Achieved reliable and reproducible fabrication of electrical interconnects over hundreds of microns.
- Demonstrated low impedance metal-metal contacts by trapping metal-coated microspheres.
- Successfully characterized resistive magnetite-based nanoparticle networks with leakage currents below 1 pA.
Conclusions:
- The developed patterning procedure is scalable, industrially relevant, and suitable for fabricating nanoscale electrical interconnects.
- The nanotrenches facilitate precise addressing of micro/nanoparticles and electrical measurements of resistive materials.
- The method offers a versatile platform for advanced electronic devices and material characterization.

