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Updated: Jun 10, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Ionic Transport Properties in Nanocrystalline Ce0.8A0.2O2-δ (with A = Eu, Gd, Dy, and Ho) Materials
Ashok Kumar Baral1, V Sankaranarayanan
1Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India. ashok@physics.iitm.ac.in.
Abstract:
The ionic transport properties of nanocrystalline 20 mol% Eu, Gd, Dy, and Ho doped cerias, with average grain size of around 14 nm were studied by correlating electrical, dielectric properties, and various dynamic parameters. Gd-doped nanocrystalline ceria shows higher value of conductivity (i.e., 1.8 × 10-4 S cm-1 at 550°C) and a lower value of association energy of oxygen vacancies with trivalent dopants Gd3+ (i.e., 0.1 eV), compared to others. Mainly the lattice parameters and dielectric constants (ε∞) are found to control the association energy of oxygen vacancies in these nanomaterials, which in turn resulted in the presence of grain and grain boundary conductivity in Gd- and Eu-doped cerias and only significant grain interior conductivity in Dy- and Ho-doped cerias.

