Related Experiment Video
Updated: Jun 10, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3
S Nazarpour1, F Afshar, C Zamani
1MIND-IN2UB, Department of Electronics, Universitat de Barcelona, Barcelona, 08028, Spain. nazarpour@ub.edu.
Abstract:
Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.
Related Concept Videos
Residual Stresses
Residual Stresses in Circular Shafts
Residual Stresses in Bending
Transformation of Plane Stress
Temperature Dependent Deformation
Stress-Strain Diagram - Ductile Materials

