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Published on: March 20, 2015
Pr:YAlO(3) microchip laser.
Martin Fibrich1, Helena Jelínková, Jan Sulc
1Czech Technical University in Prague, Faculty of Nuclear Sciences. martin.fibrich@fjfi.cvut.cz
Optics Letters
|August 4, 2010
Summary
This study demonstrates a continuous-wave (cw) Pr:YAlO(3) microchip laser operating in the near-infrared. The system achieved 139mW of laser output at 747nm, showing potential for compact laser applications.
Area of Science:
- Optics and Photonics
- Solid-State Lasers
- Materials Science
Background:
- Microchip lasers offer compact and robust laser solutions.
- Praseodymium-doped materials are suitable for near-infrared laser emission.
- Gallium Nitride (GaN) laser diodes provide efficient pumping for solid-state lasers.
Purpose of the Study:
- To report the development and characterization of a continuous-wave (cw) Pr:YAlO(3) microchip laser.
- To investigate laser operation in the near-infrared spectral region.
- To assess the performance of a Pr:YAlO(3) microchip laser pumped by a GaN laser diode.
Main Methods:
- Fabrication of a microchip resonator by depositing dielectric mirrors on Pr:YAlO(3) crystal surfaces.
- Pumping the active medium using a 1W GaN laser diode at approximately 448 nm.
- Characterization of the laser output power and efficiency.
Main Results:
- Successful cw laser operation of the Pr:YAlO(3) microchip laser in the near-infrared.
- Extraction of 139mW of laser radiation at a 747nm wavelength.
- Achieved a slope efficiency of approximately 25% with respect to incident pump power.
Conclusions:
- The Pr:YAlO(3) microchip laser system demonstrates efficient operation in the near-infrared.
- The use of GaN laser diode pumping is effective for this laser system.
- This work highlights the potential of microchip lasers for compact and efficient near-IR light sources.
