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Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells
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Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells

Published on: July 19, 2019

Photocurrent distribution in graphene-CdS nanowire devices

Thomas Dufaux1, Jens Boettcher, Marko Burghard

  • 1Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany. T.Dufaux@fkf.mpg.de

Small (Weinheim an Der Bergstrasse, Germany)
|August 5, 2010
PubMed
Abstract

No abstract available in PubMed .

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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...