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Carrier Transport

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

Electrical Transport

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The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...

The Electrical Double Layer

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In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...

Drift Velocity

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The high speed of electrical signals results from the fact that the force between charges acts rapidly at a distance. Thus, when a free charge is forced into a wire, the incoming charge pushes other charges ahead due to the repulsive force between like charges. These moving charges move the charges farther down the line. The density of charge in a system cannot easily be increased, so the signal is passed on rapidly. The resulting electrical shock wave moves through the system at nearly the...

Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

Debye–Huckel–Onsager Conductance Equation

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The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...

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Related Experiment Video

Updated: Jun 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

Electronic transport in polycrystalline graphene.

Oleg V Yazyev, Steven G Louie

Nature Materials

|August 24, 2010

Summary

Polycrystalline graphene exhibits unique electronic properties due to its grain boundaries. Researchers developed a theory showing these boundaries can either allow high charge carrier transparency or perfect reflection, crucial for graphene electronics.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Most macroscopic materials are polycrystalline, including graphene, a promising 2D material for electronics.
Grain boundaries in polycrystalline materials are topological defects that significantly influence electronic transport.
Understanding grain boundary effects is crucial for realizing large-area graphene applications.

Discussion:

A new theory models charge carrier transmission through graphene grain boundaries using periodic dislocation arrays and momentum conservation.
The theory predicts two distinct transport behaviors: high transparency or perfect reflection of charge carriers.
First-principles quantum transport calculations validate these theoretical predictions.

Key Insights:

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Published on: November 7, 2016

Graphene grain boundary structure dictates electronic transport, leading to either high transmission or perfect reflection.

These tunable transport properties occur over large energy ranges.

The findings are vital for understanding charge transport in large-area graphene.

Outlook:

Engineered periodic grain boundaries can control charge currents in graphene without altering its semimetallic nature.
This approach offers a pathway for developing practical graphene-based electronic devices.
Further research can explore precise control over grain boundary structures for tailored electronic functionalities.