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Updated: Jun 9, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Probing strain-induced electronic structure change in graphene by Raman spectroscopy
Mingyuan Huang1, Hugen Yan, Tony F Heinz
1Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA.
Abstract:
Two-phonon Raman scattering in graphitic materials provides a distinctive approach to probing the material's electronic structure through the spectroscopy of phonons. Here we report studies of Raman scattering of the two-dimensional mode of single-layer graphene under uniaxial stress and which implicates two types of modification of the low-energy electronic structure of graphene: a deformation of the Dirac cone and its displacement away from the K point.
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