A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Area of Science:

• Electrical Engineering
• Materials Science
• Computer Engineering

Background:

• Nano-scale resistive switching cross bar arrays are crucial for high-density memory applications.
• Read interference is a significant challenge in these arrays, impacting data integrity.
• Effective selection diodes are required to suppress read interference and ensure reliable operation.

Purpose of the Study:

• To develop a simplified simulation model for analyzing selection diodes in high-density cross bar arrays.
• To determine the essential electrical specifications for selection diodes to mitigate read interference.
• To provide a computationally efficient simulation method for large-scale cross bar arrays.

Main Methods:

• Application of Kirchhoff's law to model the electrical behavior of selection diodes.
• Analysis of diode specifications, including reverse/forward resistance ratio and forward current density.
• Development of a simulation approach that overcomes limitations of traditional circuit simulators for large arrays.

Main Results:

• Identified a reverse/forward resistance ratio > 10^8 and forward current density > 10^5 A cm^-2 as critical for selection diodes in 100 Mb density arrays.
• Demonstrated that the proposed model is computationally efficient for large numbers of cells (m >> 100).
• Validated the simulation method by comparing its results with a previously reported voltage estimation technique.

Conclusions:

• The developed Kirchhoff's law-based model offers a viable and efficient simulation tool for nano-scale resistive switching cross bar arrays.
• Accurate selection diode specifications are vital for achieving stable reading and writing operations in high-density memory.
• This research contributes to the advancement of high-density memory technologies by providing a practical simulation approach.