A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Gun Hwan Kim1, Kyung Min Kim, Jun Yeong Seok

  • 1Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.

Nanotechnology
|August 27, 2010
PubMed

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