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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Quantum linear magnetoresistance in multilayer epitaxial graphene
Adam L Friedman1, Joseph L Tedesco, Paul M Campbell
1Code 6876, U.S. Naval Research Laboratory, Washington, DC 20375, USA.
Nano Letters
|September 1, 2010
Summary
Researchers observed linear magnetoresistance (LMR) in multilayer epitaxial graphene. This finding, explainable by quantum mechanics, suggests potential for advanced data storage and magnetic sensors.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Linear magnetoresistance (LMR) is a phenomenon observed in certain materials.
- Epitaxial graphene grown on silicon carbide (SiC) is a promising material for electronic applications.
Purpose of the Study:
- To report the first observation of LMR in multilayer epitaxial graphene.
- To investigate the temperature dependence and underlying mechanism of LMR in this material.
- To explore potential applications of LMR in epitaxial graphene.
Main Methods:
- Fabrication of multilayer epitaxial graphene on SiC.
- Electrical transport measurements under varying magnetic fields and temperatures (2.2 K to room temperature).
- Analysis using a quantum mechanical model.
Main Results:
- Observation of large linear magnetoresistance (LMR) in multilayer epitaxial graphene.
- LMR persists from cryogenic temperatures up to room temperature.
- The observed LMR is best explained by a purely quantum mechanical model, attributed to film inhomogeneities.
Conclusions:
- Multilayer epitaxial graphene exhibits significant LMR over a wide temperature range.
- Quantum mechanical effects, influenced by film inhomogeneities, are responsible for the observed LMR.
- The substantial LMR in epitaxial graphene opens avenues for novel applications in high-density data storage and magnetic sensors/actuators.
