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Published on: April 25, 2019
Continuous-wave subwavelength microdisk lasers at λ = 1.53 µm
Zhijun Liu1, Jeffrey M Shainline, Gustavo E Fernandes
1Division of Engineering, Brown University, 182 Hope Street, Providence, Rohde Island 02906, USA. zhijun_liu@brown.edu
Optics Express
|October 14, 2010
Summary
Subwavelength InGaAs/AlInAs microdisk lasers were demonstrated at 45 K. These lasers operate in single-mode at 1.53 µm, showing potential for integrated photonics.
Area of Science:
- Optoelectronics
- Semiconductor Lasers
- Nanophotonics
Background:
- Microdisk lasers offer miniaturization potential for photonic integrated circuits.
- Indium Gallium Arsenide / Aluminum Indium Arsenide (InGaAs/AlInAs) heterostructures are key for optoelectronic devices.
Purpose of the Study:
- To demonstrate subwavelength InGaAs/AlInAs microdisk lasers.
- To characterize their lasing performance under optical pumping.
Main Methods:
- Fabrication of subwavelength InGaAs/AlInAs microdisks.
- Continuous-wave optical pumping at a heat-sink temperature of 45 K.
- Mode analysis using simulation.
Main Results:
- Demonstrated lasing of a 1.49 µm diameter, 209 nm thick microdisk.
- Achieved single-mode lasing at 1.53 µm.
- Identified the lasing mode as a whispering-gallery mode with specific radial and azimuthal numbers and a modal volume of 2.12(λ/n)(3).
Conclusions:
- Subwavelength InGaAs/AlInAs microdisk lasers are feasible.
- The demonstrated device operates in a single-mode whispering-gallery mode.
- These results are promising for developing compact laser sources.
