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Updated: Jun 6, 2026

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Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors
Published on: November 15, 2016
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy
Nanoscale Research Letters
|November 16, 2010
Abstract:
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
