Related Experiment Video
Updated: Jun 6, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking
Ho-Myoung An1, Hee Dong Kim, Yu Jeong Seo
1School of Electrical Engineering, Korea University Seoul 136-713, Korea.
Abstract:
We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.6 V at sweep voltages from 9 V to -9 V, faster program/erase speeds of 1 micros/1 ms at bias voltages of -6 V and 8 V, a lower leakage current of 7 pA and a longer data retention, compared to those of the MONOS capacitor with a CVD oxide. These improvements have been attributed to both high densification of blocking oxide film and increased nitride-related memory traps at the interface between the blocking oxide and Si3N4 layer by radical oxidation.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Capacitor With A Dielectric
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Schottky Barrier Diode

