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Published on: December 7, 2015
Electrical characterization of multi-walled carbon nanotubes
1Center for Semiconductor Components-CCS, UNICAMRF C.R 6061, CEP 13083-870, Campinas, SFP, Brazil.
Journal of Nanoscience and Nanotechnology
|December 8, 2010
Summary
This study investigated the electrical properties of multi-walled carbon nanotubes (MWNTs). Researchers found that electrical conductance increases with bias voltage, especially with nickel contacts, suggesting current flows through outer shells.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Multi-walled carbon nanotubes (MWNTs) are crucial nanomaterials with unique electrical properties.
- Understanding their electrical characteristics is essential for developing advanced electronic devices.
- Chemical vapor deposition (CVD) is a common method for growing MWNTs.
Purpose of the Study:
- To investigate the electrical properties of MWNTs.
- To examine the influence of bias voltage, temperature, and length on MWNT conductivity.
- To explore the contact properties between MWNTs and metal electrodes.
Main Methods:
- MWNTs were grown using chemical vapor deposition (CVD).
- AC dielectrophoresis was used to deposit nanotubes onto metal electrodes.
- Nickel (Ni) and Palladium (Pd) films were deposited using electroless deposition to improve contact.
- Electrical characteristics were measured using 2- and 4-terminal configurations.
Main Results:
- Differential conductance increased significantly with applied bias voltage.
- This bias-dependent conductance was more pronounced with Ni contacts compared to Pd.
- Electrical resistance measurements supported a resistive transmission line model for MWNTs.
- Current flow at low bias was primarily attributed to the outermost shells of the MWNTs.
Conclusions:
- The electrical transport in MWNTs is strongly dependent on bias voltage and contact materials.
- The resistive transmission line model effectively describes MWNT electrical behavior.
- Current conduction in MWNTs at low bias is localized to the outer shells, impacting device performance.

