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Related Experiment Video

Updated: Jun 6, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Probing charge transfer at surfaces using graphene transistors.

Pierre L Levesque1, Shadi S Sabri, Carla M Aguirre

  • 1Regroupement Québécois sur les matériaux de pointe, Université de Montréal, Montréal, Québec H3C 3J7, Canada. p.levesque@umontreal.ca

Nano Letters
|December 15, 2010
PubMed
Summary
This summary is machine-generated.

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Graphene field-effect transistors (FETs) are sensitive to gases. Researchers found that adsorbed water and oxygen electrochemistry cause doping in graphene FETs, enabling new sensor development.

Area of Science:

  • Materials Science
  • Electrochemistry
  • Nanotechnology

Background:

  • Graphene field-effect transistors (FETs) exhibit high sensitivity to gas exposure.
  • The ubiquitous charge transfer doping in graphene FETs by atmospheric gases remains poorly understood.
  • Understanding doping mechanisms is crucial for developing advanced graphene-based devices.

Purpose of the Study:

  • To quantitatively investigate the electrochemical mechanisms responsible for graphene FET doping.
  • To identify the specific reactions and kinetics involved in gas-induced doping.
  • To establish graphene FETs as sensitive potentiometers for interfacial electrochemistry.

Main Methods:

  • Utilized graphene field-effect transistors (FETs) to monitor electrochemical potential changes.

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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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Last Updated: Jun 6, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

  • Conducted high-purity gas exposure experiments.
  • Analyzed the interplay between adsorbed water, graphene, and the substrate.

    • Main Results:

    • Demonstrated that electrochemistry involving adsorbed water, graphene, and the substrate quantitatively explains graphene FET doping.
    • Identified the water/oxygen redox couple as the primary doping mechanism.
    • Captured the reaction kinetics of the water/oxygen electrochemical process.

    Conclusions:

    • Graphene FETs function as highly sensitive potentiometers due to their unique electronic properties.
    • The study elucidates the fundamental electrochemical basis for gas doping in graphene.
    • This research provides a foundation for developing novel graphene-based electrochemical nanoprobes and gas sensors.