Energy efficient chalcogenide waveguide Raman laser for optical interconnect.

Area of Science:

• Photonics and Optical Engineering
• Materials Science for Optoelectronics

Background:

• Silicon photonics is a leading technology for optical interconnects.
• Raman amplification and lasing in waveguides are crucial for enhancing optical signal processing.
• Existing silicon-based Raman devices face limitations in energy efficiency and performance.

Purpose of the Study:

• To theoretically demonstrate the potential of chalcogenide (As2Se3) waveguides as a more energy-efficient platform for Raman amplification and lasing.
• To compare the performance of As2Se3 waveguides against silicon waveguides for optical interconnect applications.
• To establish a figure-of-merit (FOM) for evaluating waveguide Raman laser performance.

Main Methods:

• Theoretical modeling and simulation of Raman amplification and lasing in As2Se3 waveguides.
• Comparative analysis of conversion efficiency, lasing threshold, and operational linearity between As2Se3 and silicon.
• Optimization of As2Se3 waveguide parameters, including end-facet reflectivity, to further reduce lasing threshold.

Main Results:

• As2Se3 waveguides achieve an ultrahigh maximum conversion efficiency of 40%, seven times higher than silicon Raman lasers.
• A 33% reduction in lasing threshold to 299 mW is observed in As2Se3 waveguides, with a wider linear operating region.
• Further optimization of Stokes end-facet reflectivity reduces the lasing threshold to 100 mW.

Conclusions:

• Chalcogenide (As2Se3) waveguides represent a superior platform for energy-efficient Raman amplification and lasing in optical interconnects.
• As2Se3 offers significant advantages over silicon in terms of energy consumption and device miniaturization.
• The developed figure-of-merit (FOM) provides a standardized method for comparing waveguide Raman laser performance.