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Lift-off PMN-PT Thick Film for High Frequency Ultrasonic Biomicroscopy
Benpeng Zhu1, Jiangxue Han, Jing Shi
1Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
This study presents a piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film. The film demonstrates excellent dielectric and ferroelectric properties, suitable for acoustic transducer applications.
Area of Science:
- Materials Science
- Solid State Physics
- Ceramic Engineering
Background:
- Piezoelectric materials are crucial for transducer applications.
- Developing high-performance piezoelectric thick films is essential for advanced devices.
- Sol-gel methods offer precise control over film properties.
Purpose of the Study:
- To deposit and characterize a piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film.
- To evaluate the dielectric and ferroelectric properties of the lifted-off film.
- To assess the performance of a transducer fabricated using the PMN-35PT thick film.
Main Methods:
- Sol-gel composite method for depositing a ~12 µm thick PMN-35PT film on a Pt-buffered Si substrate.
- Wet chemical etching for separating the film from the substrate.
- Measurement of dielectric properties (dielectric constant, loss) and ferroelectric properties (remnant polarization).
- Fabrication and testing of a single-element acoustic transducer.
Main Results:
- The lifted-off PMN-35PT thick film exhibited desirable dielectric and ferroelectric characteristics.
- A dielectric constant of 3,326 and a dielectric loss of 0.037 at 1 kHz were recorded.
- A remnant polarization of 30.0 µC/cm(2) was achieved.
- The fabricated acoustic transducer demonstrated a wide -6 dB bandwidth of 63.6% at 110 MHz.
Conclusions:
- The sol-gel derived, lifted-off PMN-35PT thick film possesses excellent dielectric and ferroelectric properties.
- The film's performance is suitable for high-frequency acoustic transducer applications.
- This fabrication approach enables the development of advanced piezoelectric devices.
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