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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Facile preparation and upconversion luminescence of graphene quantum dots
Jianhua Shen1, Yihua Zhu, Cheng Chen
1Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China.
Chemical Communications (Cambridge, England)
|December 22, 2010
Abstract:
A facile hydrazine hydrate reduction of graphene oxide (GO) with surface-passivated by a polyethylene glycol (PEG) method for the fabrication of graphene quantum dots (GQDs) with frequency upconverted emission is presented. And we speculate on the upconversion luminescence due to the anti-Stokes photoluminescence (ASPL), where the δE between the π and σ orbitals is near 1.1 eV.
