A method for accurate localisation of EBSD pattern centres
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Updated: Jun 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Claire Maurice1, Krzysztof Dzieciol, Roland Fortunier
1SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint-Etienne, 158 cours Fauriel, 42023 Saint-Etienne, Cedex 2, France. maurice@emse.fr
Abstract:
The moving screen technique for pattern centre localisation is revisited. A cross-correlation based iterative procedure is developed to find both the zoom factor and the zoom centre (which is also the pattern centre) between two EBSD diffraction patterns acquired at two camera positions. The procedure involves two steps: first, a rough estimate of the pattern centre position and zoom factor (the ratio of the two detector distances) is obtained by cross-correlating the entire images. Then, based on this first estimate, cross-correlation of smaller regions of interest (ROIs) gives the displacement field which is interpreted as a zoom factor misfit coupled with a zoom centre position misfit. These misfits are iteratively decreased until the displacement field is reduced to the noise level. The procedure is first applied to simulated patterns and it is shown that the iterative procedure converges very rapidly to the exact solution with an accuracy better than 1/100th of pixel. The potential of this technique for experimental patterns is discussed and recommendations for new EBSD detectors are proposed.
