Updated: Jun 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Claire Maurice1, Krzysztof Dzieciol, Roland Fortunier
1SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint-Etienne, 158 cours Fauriel, 42023 Saint-Etienne, Cedex 2, France. maurice@emse.fr
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
A new iterative cross-correlation method precisely locates the pattern center and zoom factor in electron backscatter diffraction (EBSD) patterns. This technique rapidly achieves sub-pixel accuracy, enhancing EBSD analysis.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: