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Updated: Jun 5, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors
Abstract:
The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn-model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1∕f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.
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