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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Types Of Superconductors01:28

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A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
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Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Overlap junctions for high coherence superconducting qubits.

X Wu1, J L Long1,2, H S Ku1

  • 1National Institute of Standards and Technology, Boulder, Colorado 80305, USA.

Applied Physics Letters
|March 12, 2025
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Summary
This summary is machine-generated.

Researchers fabricated sub-micron Josephson junctions for superconducting qubits using in situ Ar milling. This cleaning method enhances coherence and simplifies fabrication, paving the way for improved qubit manufacturing.

Keywords:
03.67.Lx

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Area of Science:

  • Quantum computing
  • Superconducting electronics
  • Materials science

Background:

  • High-coherence superconducting qubits are essential for quantum computing.
  • Fabricating sub-micron Josephson junctions with high yield and coherence remains a challenge.
  • Existing methods often rely on angle-dependent shadow masks, limiting scalability.

Purpose of the Study:

  • To demonstrate the fabrication of sub-micron Josephson junctions using standard processing techniques.
  • To investigate the impact of in situ Ar milling on aluminum surfaces for junction formation.
  • To achieve high coherence in Josephson junctions for superconducting qubits.

Main Methods:

  • Utilized two-step lithography with normal-angle evaporation.
  • Employed in situ Argon (Ar) milling for cleaning aluminum surfaces prior to oxidation.
  • Defined top and bottom electrodes using electron-beam lithography and an additive process.

Main Results:

  • Successfully fabricated sub-micron Josephson junctions.
  • Achieved high coherence in junctions formed on Ar-milled aluminum surfaces.
  • Eliminated the need for angle-dependent shadow masks, simplifying the process.
  • Demonstrated compatibility with conventional CMOS processing for improved margins and yield.

Conclusions:

  • In situ Ar milling of aluminum surfaces is a viable method for fabricating high-coherence Josephson junctions.
  • This technique simplifies fabrication and is conducive to scalable manufacturing of superconducting qubits.
  • The demonstrated approach supports the integration of advanced qubit fabrication with standard semiconductor processing.