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Updated: Jun 5, 2026

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Tunneling spin injection into single layer graphene.

Wei Han1, K Pi, K M McCreary

  • 1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.

Physical Review Letters
|January 15, 2011
PubMed
Summary
This summary is machine-generated.

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We demonstrate efficient spin injection into single layer graphene (SLG) using novel tunnel barriers. This method achieved the highest nonlocal magnetoresistance (ΔR(NL)) ever recorded, paving the way for advanced spintronic devices.

Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Spin injection into graphene is crucial for spintronic applications.
  • Achieving efficient spin injection requires overcoming interface challenges.
  • Existing methods often suffer from spin relaxation at the interface.

Purpose of the Study:

  • To achieve efficient tunneling spin injection from cobalt into single layer graphene.
  • To investigate the role of titanium dioxide (TiO₂) seeded magnesium oxide (MgO) barriers.
  • To explore spin transport dynamics in graphene under different contact regimes.

Main Methods:

  • Fabrication of single layer graphene (SLG) devices with TiO₂ seeded MgO tunnel barriers.
  • Utilizing cobalt (Co) as the spin injector.

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  • Measuring nonlocal magnetoresistance (ΔR(NL)) at room temperature.
  • Analyzing ΔR(NL) as a function of SLG conductivity.

    • Main Results:

    • Successful tunneling spin injection from Co into SLG was achieved.
    • A record nonlocal magnetoresistance (ΔR(NL)) of 130 Ω was observed at room temperature.
    • Experimental results align with drift-diffusion theory predictions for spin transport.
    • Tunnel barriers were shown to reduce contact-induced spin relaxation.

    Conclusions:

    • TiO₂ seeded MgO barriers enable highly efficient spin injection into SLG.
    • The observed magnetoresistance is the largest reported for any material.
    • Tunnel barriers are critical for minimizing spin relaxation and advancing graphene spintronics.
    • This work provides a pathway for future studies on spin relaxation mechanisms in graphene.