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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Wayne M Witzel1, Malcolm S Carroll, Andrea Morello
1Sandia National Laboratories, Albuquerque, New Mexico 87185, USA. wwitzel@sandia.gov
Isotope-enriched silicon shows promise for quantum computing, but background electron spins from phosphorus impurities cause significant spin decoherence. This study identifies these background dopants as the primary decoherence mechanism, crucial for advancing silicon quantum technologies.
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