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Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 5, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Single dopants in semiconductors.

Paul M Koenraad¹, Michael E Flatté

¹COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands. p.m.koenraad@tue.nl

Nature Materials

|January 25, 2011

Summary

This summary is machine-generated.

Researchers can now observe and manipulate single dopants in semiconductors, enabling new quantum information devices and the emerging field of solotronics (solitary dopant optoelectronics). This breakthrough unlocks precise control over material properties for advanced applications.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Published on: January 19, 2018

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Area of Science:

Solid-state physics
Materials science
Quantum information science

Background:

Semiconductor properties are highly sensitive to dopants, offering tunable electronic, optical, and magnetic characteristics.
Recent advancements allow for the study of individual dopants, moving beyond ensemble effects.
Discrete dopant properties are crucial for emerging technologies like quantum information and single-dopant transistors.

Purpose of the Study:

To review significant progress in observing, creating, and manipulating single dopants in semiconductors over the last decade.
To highlight the application of single dopants in novel devices.
To introduce the new field of solotronics (solitary dopant optoelectronics).

Main Methods:

Advanced characterization techniques for observing single dopant effects.
Precise fabrication methods for controllably creating single dopant structures.
Manipulation protocols for controlling individual dopant properties and their impact.

Main Results:

Demonstrated ability to isolate and study the impact of single dopants on semiconductor properties.
Development of novel devices leveraging the unique characteristics of solitary dopants.
Establishment of foundational techniques for the field of solotronics.

Conclusions:

Significant progress has been made in understanding and utilizing single dopants.
Single dopant manipulation opens new avenues for quantum computing and advanced semiconductor devices.
The field of solotronics is emerging, promising innovative optoelectronic applications.