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A General and Modular Approach to Solid-State Integration of Zero-Dimensional Quantum Systems.

Marzieh Kavand1,2, Zoe Phillips1, William H Koll1

  • 1Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.

Nano Letters
|September 3, 2025
PubMed
Summary
This summary is machine-generated.

We developed an all-electrical readout for quantum states using graphene and boron nitride tunnel junctions. This scalable method enables solid-state quantum device integration without optical readout.

Keywords:
defects in hexagonal boron nitridemolecular tunnel junctiontunneling spectroscopytwo-dimensional tunnel junction

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Area of Science:

  • Quantum Computing
  • Materials Science
  • Solid-State Physics

Background:

  • Quantum technologies often rely on optical readout, limiting scalability and integration.
  • Quasi-0D quantum states (0D-QS) like defects and molecules are promising qubits but require efficient readout methods.

Purpose of the Study:

  • To present a modular, scalable, all-electrical readout mechanism for quasi-0D quantum states.
  • To demonstrate integration with solid-state quantum technologies.

Main Methods:

  • Fabrication of high-quality tunnel junctions using mechanical exfoliation and stacking of multilayer graphene (MLG) and hexagonal boron nitride (hBN).
  • Encapsulation of target 0D-QS within an MLG/hBN/0D-QS/hBN/MLG heterostructure.
  • Utilizing Coulomb and spin-blockade effects for all-electronic spectroscopy and readout.

Main Results:

  • Demonstrated electronic tunneling spectroscopy of point defects in hBN.
  • Successfully performed spectroscopy on the molecular qubit vanadyl phthalocyanine.
  • Validated an all-electrical readout scheme for 0D-QS.

Conclusions:

  • This approach offers a new pathway for incorporating molecules and atomic defects into solid-state quantum devices.
  • The developed readout scheme bypasses the limitations of optical processes, enabling broader applications.