Related Experiment Video
Updated: Jun 4, 2026

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements
Published on: February 28, 2016
Sagnac-loop phase shifter with polarization-independent operation.
Tien Tjuen Ng1, Darwin Gosal, Antía Lamas-Linares
1Centre for Quantum Technologies/Department of Physics, National University of Singapore, Singapore.
This study demonstrates a novel polarization-independent phase shifter for quantum information. The bulk-optic device maintains arbitrary polarization states, crucial for advanced photonic applications.
Area of Science:
- Optics
- Quantum Information Science
- Photonics
Background:
- Photonic quantum information applications require precise control over light polarization.
- Existing phase shifters can be polarization-dependent, limiting their utility.
- Development of polarization-independent optical components is essential for robust quantum technologies.
Purpose of the Study:
- To demonstrate a bulk-optic, polarization-independent phase shifter.
- To integrate this phase shifter into an optical switch for quantum information processing.
- To evaluate the device's performance in terms of contrast and switching speed while maintaining polarization integrity.
Main Methods:
- Utilized a transverse electro-optic modulator within a Sagnac-type loop.
- Incorporated Faraday rotators to achieve direction-dependent polarization rotation.
- Combined the Sagnac loop with a Mach-Zehnder interferometer to create an optical switch.
Main Results:
- Achieved a polarization-independent phase shifter.
- Demonstrated an optical switch with 96% on/off contrast.
- Exhibited a fast switching time of 1.6 nanoseconds.
- Confirmed the device maintains arbitrary polarization states.
Conclusions:
- The demonstrated bulk-optic phase shifter is suitable for photonic quantum information applications.
- The polarization-independent nature and high performance of the optical switch are significant advancements.
- This device offers a robust solution for manipulating quantum information encoded in photons.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Group Polarization
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Phase-lead and Phase-lag Controllers
Inverting and Non-inverting OpAmps
Time and frequency -Domain Interpretation of Phase-lag Control
Phase-lag controllers do not place a pole at zero, but instead influence the steady-state error by amplifying any finite,...

