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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin
A M Korolev1, V I Shnyrkov, V M Shulga
1Institute of Radio Astronomy, NAS of Ukraine, Kharkov, Ukraine. korol@rian.kharkov.ua
The Review of Scientific Instruments
|February 2, 2011
Abstract:
We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.
