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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible
Bart Kuyken1, Stéphane Clemmen, Shankar Kumar Selvaraja
1INTEC Department, Ghent University-IMEC, Ghent, Belgium. Bart.Kuyken@Intec.ugent.be
Optics Letters
|February 18, 2011
Abstract:
We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter is 770 W(-) m(-1), nonlinear absorption 28 W(-1) m(-1), bandgap 1.61 eV.
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