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Related Experiment Videos

Pixel-based OPC optimization based on conjugate gradients.

Xu Ma1, Gonzalo R Arce

  • 1Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Educationof China, School of Optoelectronics, Beijing Institute of Technology, Beijing, China. maxu@bit.edu.cn

Optics Express
|March 4, 2011
PubMed
Summary
This summary is machine-generated.

This study introduces faster optical proximity correction (OPC) algorithms using the conjugate gradient (CG) method for semiconductor manufacturing. It also incorporates mask rule check (MRC) penalties for improved manufacturability and reduced computational complexity.

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Area of Science:

  • Semiconductor Manufacturing
  • Computational Lithography
  • Materials Science

Background:

  • Optical proximity correction (OPC) is crucial for high-resolution semiconductor lithography.
  • Pixel-based OPC (PBOPC) faces challenges in computational complexity and mask manufacturability.
  • Current steepest descent (SD) algorithms for OPC are slow and lack manufacturability.

Purpose of the Study:

  • Develop faster OPC optimization algorithms.
  • Enhance mask pattern manufacturability using mask rule check (MRC) penalties.
  • Reduce the computational complexity of pixel-based OPC.

Main Methods:

  • Utilized the conjugate gradient (CG) method for faster convergence compared to SD.
  • Employed a Fourier series expansion model for imaging formation.
  • Introduced a novel MRC penalty to improve sub-resolution assistant feature (SRAF) sizing and spacing.
  • Developed a projection method for further complexity reduction.

Main Results:

  • Achieved significantly faster convergence with the CG method.
  • Successfully improved mask manufacturability by enforcing MRC requirements.
  • Demonstrated reduced computational complexity in the optimized mask patterns.
  • The proposed MRC penalty effectively enlarged SRAFs and inter-feature distances.

Conclusions:

  • The CG-based OPC method offers a substantial improvement in speed and efficiency.
  • The novel MRC penalty effectively addresses manufacturability concerns in PBOPC.
  • This research provides a more computationally efficient and manufacturable solution for advanced semiconductor lithography.