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Doping of ceria surfaces with lanthanum: a DFT + U study
Irene Yeriskin1, Michael Nolan
1Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Republic of Ireland.
Lanthanum doping in ceria surfaces creates unique oxygen hole defects, particularly with DFT+U calculations. This study reveals unusual defect formation mechanisms in ceria, suggesting further experimental investigation.
Area of Science:
- Materials Science
- Surface Science
- Computational Chemistry
Background:
- Ceria (cerium oxide) is a crucial material in catalysis and solid oxide fuel cells.
- Understanding defect formation in doped ceria is essential for optimizing its properties.
- Lanthanum doping is a common strategy to modify ceria's oxygen storage capacity.
Purpose of the Study:
- To investigate defect formation in La-doped ceria (111) and (110) surfaces.
- To elucidate the role of DFT+U calculations in describing these defects.
- To understand the unusual compensation mechanisms in La-doped ceria.
Main Methods:
- Density Functional Theory (DFT) calculations.
- DFT corrected for on-site Coulomb interactions (DFT+U) with specific U values for Ce 4f and O 2p states.
- Surface defect energy calculations for (111) and (110) ceria surfaces.
Main Results:
- DFT+U accurately describes the formation of an oxygen hole defect (La'(Ce) + O.(o)) when La substitutes a Ce(3+) site.
- The formation energy of oxygen vacancies is reduced by La doping but remains positive.
- Oxygen vacancy formation leads to Ce(3+) and a compensated oxygen hole, an unusual mechanism for this class of materials.
Conclusions:
- The DFT+U method is critical for understanding defect states in La-doped ceria.
- Cerium's facile reduction plays a key role in the observed unusual defect formation.
- Experimental validation of these computational findings is recommended.
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