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Updated: Jun 3, 2026
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Coulomb explosion sputtering of selectively oxidized Si
P Karmakar1, S Bhattacharjee, V Naik
1RIB Laboratory, Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700 064, India. prasantak@veccal.ernet.in
Summary
Multiply charged ions enhance sputtering of silicon oxide surfaces. Higher ion energy increases sputtering yield on non-conducting oxide compared to semiconducting silicon, demonstrating potential for nanostructure tailoring.
Area of Science:
- Surface science
- Materials science
- Ion-surface interactions
Background:
- Silicon (Si) and silicon oxide (SiO2) surfaces exhibit distinct properties.
- Oblique angle oxygen ion bombardment on Si(100) creates unique oxidized ripple structures.
- Multiply charged ions (MCI) possess high potential energy.
Purpose of the Study:
- Investigate the sputtering behavior of coexisting Si and SiO2 surfaces under MCI impact.
- Determine the influence of ion potential energy on sputtering yield.
- Explore the application of MCI for nanostructure modification.
Main Methods:
- Fabrication of oxidized ripple structures on Si(100) via oxygen ion bombardment.
- Sputtering experiments using multiply charged Argon ions (Ar(q+)).
- Surface analysis using Atomic Force Microscopy (AFM) and Conducting Atomic Force Microscopy (CAFM).
Main Results:
- Sputtering yield is significantly higher on the non-conducting SiO2 side compared to the semiconducting Si side.
- Increased sputtering yield correlates directly with the potential energy of the incident Ar(q+) ions.
- Coulomb explosion model explains the observed preferential sputtering based on surface conductivity.
Conclusions:
- Multiply charged ions enable selective sputtering of nanostructured surfaces.
- Potential energy of ions is a critical factor in sputtering yield, especially for insulating materials.
- Highly charged ions offer a promising tool for precise nanostructure cleaning and tailoring.
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