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Analysis of EEL spectrum of low-loss region using the C(s)-corrected STEM-EELS method and multivariate analysis
Takashi Yamazaki1, Yasutoshi Kotaka, Yuji Kataoka
1Device & Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan. yamazakit@jp.fujitsu.com
Abstract:
We analyzed a Si/SiO(2) interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy-electron energy loss spectroscopy which is characterized by using the electron energy loss spectrum of the low-loss region. We extracted the low-loss spectra of Si, SiO(2) and an interface state. Even if the interface is formed from materials with different dielectric functions, the present method will prove suitable for obtaining a more quantitative understanding of the dielectric characteristic.
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