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Updated: Jun 3, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
Published on: July 8, 2016
N López1, L A Reichertz, K M Yu
1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.
Researchers developed a multiband photovoltaic device using gallium nitride (or GaN) and arsenic (or As) alloys. This device efficiently converts a significant portion of the solar spectrum into electricity by utilizing three distinct energy bands.
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Published on: October 12, 2019
11:38Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
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