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Related Concept Videos

Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...

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Related Experiment Video

Updated: Jun 3, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

Engineering the electronic band structure for multiband solar cells.

N López1, L A Reichertz, K M Yu

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.

Physical Review Letters
|March 17, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed a multiband photovoltaic device using gallium nitride (or GaN) and arsenic (or As) alloys. This device efficiently converts a significant portion of the solar spectrum into electricity by utilizing three distinct energy bands.

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Related Experiment Videos

Last Updated: Jun 3, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
11:38

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Area of Science:

  • Semiconductor physics
  • Materials science
  • Photovoltaics

Background:

  • Gallium Nitride (or GaN) and Arsenic (or As) alloys possess unique electronic band structures.
  • Highly mismatched alloys offer potential for engineering semiconductor properties.
  • Multiband photovoltaic devices are crucial for efficient solar spectrum utilization.

Purpose of the Study:

  • To design, fabricate, and test a multiband photovoltaic device utilizing GaN(x)As(1-x) alloys.
  • To investigate the optical activity and energy band structure of the device.
  • To demonstrate the feasibility of using highly mismatched alloys for tailored semiconductor band structures.

Main Methods:

  • Device fabrication using GaN(x)As(1-x) alloys.
  • Optical activity measurements.
  • Electroluminescence, quantum efficiency, and photomodulated reflectivity analyses.
  • Application of the band anticrossing model.

Main Results:

  • The device exhibits optical activity across three energy bands, capturing a crucial part of the solar spectrum.
  • Performance metrics align with predictions from the band anticrossing model.
  • Successful conversion of absorbed solar energy into electrical current.

Conclusions:

  • Highly mismatched alloys can be engineered to create specific semiconductor energy band structures.
  • The developed multiband photovoltaic device demonstrates efficient solar energy conversion.
  • This approach shows promise for advanced photovoltaic applications.