Related Experiment Video
Updated: Jun 3, 2026
08:58
Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
Published on: January 28, 2021
Optical coupling of deep-subwavelength semiconductor nanowires
Linyou Cao1, Pengyu Fan, Mark L Brongersma
1Geballe Laboratory for Advanced Materials, Stanford University, California 94305, United States.
Nano Letters
|March 30, 2011
Summary
We demonstrate tunable optical coupling in pairs of semiconductor nanowires (NWs). Engineering this coupling significantly alters their broadband antenna response, offering new possibilities for nano-optic devices.
Area of Science:
- Photonics and Nanotechnology
- Optoelectronics
Background:
- Coupled resonators are key to novel functionalities, analogous to molecular synthesis.
- Photonic coupling of high-Q dielectric/semiconductor microresonators is established.
- Coupling of low-Q plasmonic nanostructures enables advanced devices.
Purpose of the Study:
- Explore the largely uninvestigated photonic coupling of semiconductor nanowires (NWs).
- Investigate NWs as low-Q optical antennas for light reception and broadcasting.
- Demonstrate tunability of NW optical coupling and its effect on antenna response.
Main Methods:
- Fabrication of coupled semiconductor nanowire (NW) structures.
- Optical characterization of NW antenna response.
- Development of coupled-mode theory for NW coupling.
Main Results:
- Semiconductor NWs function as broadband optical antennas.
- Optical coupling significantly tunes the antenna response of NW pairs.
- An intuitive coupled-mode theory accurately explains the observed coupling behavior.
Conclusions:
- Engineering optical coupling in NW pairs offers a pathway to tunable nano-optic devices.
- This work opens new avenues for utilizing NWs in optoelectronics and nanophotonics.
- The developed coupled-mode theory provides a framework for designing NW-based optical systems.
Related Concept Videos
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...