Controlled growth of single-walled carbon nanotubes for unique nanodevices

The controlled growth of bent and horizontally aligned single-walled carbon nanotubes (SWNTs) is demonstrated in this study. The bent SWNTs growth is attributed to the interaction between van der Waals force with substrate and aerodynamic force from gas flow. The curvature of bent SWNTs can be tailored by adjusting the angle between gas flow and step-edge direction. Electrical characterization shows that the one-dimensional resistivity of bent SWNTs is correlated with the curvature, which is due to strain induced energy bandgap variation. Additionally, a downshift of 10 cm(-1) in G-band is found at curved part by Raman analysis, which may be resulted from the bending induced carbon-carbon bond variation. In addition, horizontally aligned SWNTs and crossbar SWNTs were demonstrated. To prove the possibility of integrating the SWNTs having controllable morphology in carbon nanotube based electronics, an inverter with a gain of 2 was built on an individual horizontally aligned carbon nanotube.