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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics

C Henkel1, S Abermann, O Bethge

  • 1Vienna University of Technology, Institute for Solid State Electronics, Vienna 1040, Austria.

Microelectronic Engineering
|April 5, 2011
PubMed

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