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Updated: Jun 2, 2026

Investigation of Early Plasma Evolution Induced by Ultrashort Laser Pulses
Published on: July 2, 2012
High voltage pulser with a fast fall-time for plasma immersion ion implantation
Zongtao Zhu1, Chunzhi Gong, Xiubo Tian
1State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
Abstract:
A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 μs, compared to a fall time of 80 μs if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.
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