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P3HT as hole transport material and assistant light absorber in CdS quantum dots-sensitized solid-state solar cells

Jin Qian1, Qi-Sheng Liu, Gang Li

  • 1Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, People's Republic of China 100190.

Chemical Communications (Cambridge, England)
|May 10, 2011
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...