Modeling for accurate dimensional scanning electron microscope metrology: then and now.

Area of Science:

• Materials Science
• Physics
• Metrology

Background:

• Accurate dimensional measurements are crucial in advanced manufacturing and research.
• Scanning Electron Microscopy (SEM) is a key technique for nanoscale metrology.
• Modeling plays a vital role in enhancing SEM accuracy.

Purpose of the Study:

• To review the historical development of modeling techniques for dimensional SEM.
• To emphasize advancements in Monte Carlo methods for electron generation modeling.
• To present a future outlook for SEM dimensional metrology.

Main Methods:

• Review of scientific literature on SEM modeling.
• Analysis of Monte Carlo simulation techniques for electron beam interactions.
• Development of a technology timeline for metrology advancements.

Main Results:

• Significant progress in modeling has improved SEM dimensional accuracy.
• Monte Carlo methods have become central to understanding electron generation.
• A clear technological progression in SEM metrology modeling is evident.

Conclusions:

• Continued refinement of modeling, particularly Monte Carlo simulations, is essential for future SEM metrology.
• Achieving higher accuracy requires addressing specific technological and computational challenges.
• The review provides a roadmap for future research and development in dimensional SEM.