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Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization.

Giuseppe Greco¹, Filippo Giannazzo, Alessia Frazzetto

¹Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII n, 5, Zona Industriale, 95121 Catania, Italy. fabrizio.roccaforte@imm.cnr.it.

Nanoscale Research Letters

|June 30, 2011

Summary

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Near-surface processing of aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructures impacts device performance. Fluorine plasma treatment shifts threshold voltage in high-electron mobility transistors (HEMTs) by altering electrical properties.

Area of Science:

Semiconductor Physics
Materials Science
Nanotechnology

Background:

AlGaN/GaN heterostructures are crucial for high-power electronics.
Controlling near-surface properties is essential for optimizing high-electron mobility transistor (HEMT) performance.
Understanding the impact of plasma processing on AlGaN/GaN interfaces is vital for device fabrication.

Purpose of the Study:

To investigate the effects of CHF3 plasma and rapid thermal oxidation on AlGaN/GaN heterostructures.
To correlate near-surface modifications with electrical property changes in HEMTs.
To compare the efficacy of plasma-based versus oxidation-based gate control processes.

Main Methods:

Electrical characterization of HEMTs.
Advanced nanoscale imaging using transmission electron microscopy (TEM).

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Surface morphology analysis via atomic force microscopy (AFM).

Local electrical property mapping using conductive atomic force microscopy (C-AFM).

Main Results:

CHF3 plasma treatment induced a positive shift in HEMT threshold voltage.
C-AFM revealed localized electrical modifications due to fluorine incorporation.
Rapid thermal oxidation created a controlled oxide layer, increasing underlying resistance.

Conclusions:

Near-surface processing, particularly fluorine plasma, significantly alters AlGaN/GaN HEMT electrical characteristics.
C-AFM is effective in visualizing localized electrical changes induced by plasma treatments.
Both plasma and oxidation methods offer pathways for gate control in AlGaN/GaN devices, with distinct mechanisms.