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Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

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Related Experiment Video

Updated: Jan 14, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Laser Processing of Ti Contacts for Ohmic Behavior on P‑Type 4H-SiC.

Roberto Vabres¹, Gabriele Bellocchi², Corrado Bongiorno³

¹Engineering Department, University of Palermo, Palermo 90128, Italy.

ACS Applied Electronic Materials

|October 20, 2025

Summary

This summary is machine-generated.

Pulsed laser annealing (PLA) with titanium (Ti) enables low-temperature ohmic contacts on p-type silicon carbide (SiC). This method improves conduction by over 50% and creates stable Ti-Si-C interfaces for advanced power devices.

Keywords:

merged PiN Schoktty ohmic contact phase composition pulsed laser annealing silicon carbide

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Published on: December 5, 2015

Area of Science:

Materials Science
Semiconductor Physics
Electrical Engineering

Background:

Ohmic contact formation on p-type 4H-silicon carbide (SiC) is critical for power device performance.
Conventional methods involve high thermal budgets or complex multilayer stacks, limiting scalability and efficiency.

Purpose of the Study:

To develop a selective, low thermal budget method for ohmic contacts on p-type 4H-SiC.
To investigate the effects of pulsed laser annealing (PLA) on titanium (Ti) metallization for contact formation.

Main Methods:

Utilized single Ti metallization combined with PLA on p-type 4H-SiC.
Applied varying laser fluences (above 3.6 J/cm²) and analyzed current-voltage (I-V) characteristics.
Employed cross-sectional transmission electron microscopy (TEM) and elemental mapping to characterize interfacial structures.

Main Results:

PLA fluences above 3.6 J/cm² resulted in linear I-V behavior, indicating ohmic contact formation.
A 50% improvement in conduction was observed at 3.8 J/cm², attributed to deeper SiC consumption and formation of epitaxial SiC/TiC layers.
Higher fluences promoted ternary Ti-Si-C phases, enhancing interfacial stability and electrical performance.

Conclusions:

PLA offers precise control over interfacial reactions and microstructure for ohmic contacts on p-type 4H-SiC.
This approach is scalable, selective, and thermally efficient, advancing SiC power electronics.
The developed method facilitates the fabrication of high-performance, next-generation SiC-based power devices.