Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

Area of Science:

• Materials Science
• Nanotechnology
• Solid-State Physics

Background:

• Silicon nanocrystals (Si-ncs) are promising for advanced electronic devices.
• Understanding charge dynamics in Si-ncs is crucial for memory applications.

Purpose of the Study:

• To investigate the memory properties and charge effects in isolated Si nanocrystals.
• To evaluate charge retention times and analyze capacitance changes.

Main Methods:

• Formation of isolated Si nanocrystals using a dewetting process.
• Utilizing scanning capacitance microscopy and spectroscopy for analysis.
• Employing direct current (DC) bias and ramp processes for charge injection and characterization.

Main Results:

• Observed significant hysteresis windows under ramp processes.
• Demonstrated separate injection of holes or electrons into Si nanocrystals.
• Successfully detected capacitance changes at the nanometer scale due to trapped charges.

Conclusions:

• Isolated Si nanocrystals exhibit robust memory properties.
• The study provides a foundation for developing nanocrystal charge trap memory.
• Scanning capacitance microscopy/spectroscopy is effective for nanometer-scale charge analysis.