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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

Jing-Min Ma1, Jia Zhao, Kai-Cheng Zhang

  • 1Department of Physics, Bohai University, Jinzhou 121000, China. chifeng@semi.ac.cn.

Nanoscale Research Letters
|June 30, 2011
PubMed
Summary
This summary is machine-generated.

We investigated spin-dependent transport in a quantum-dot ring connected to ferromagnetic leads. The study reveals that controlling inter-lead coupling can reverse current direction and change tunnel magnetoresistance (TMR) sign.

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Area of Science:

  • Condensed matter physics
  • Quantum electronics
  • Spintronics

Background:

  • Quantum dots (QDs) are crucial in spintronics for controlling electron spin.
  • Ferromagnetic leads enable spin-polarized current injection and detection.
  • Understanding spin transport in coupled QD systems is key for novel electronic devices.

Purpose of the Study:

  • To theoretically investigate spin-dependent transport through a QD ring.
  • To analyze the influence of noncollinear magnetizations in ferromagnetic leads.
  • To explore the effects of inter-lead coupling on transport properties.

Main Methods:

  • Utilizing the nonequilibrium Green's function technique.
  • Analyzing tunneling current, spin polarization, and tunnel magnetoresistance (TMR).
  • Investigating dependencies on bias voltage and inter-lead coupling strength.

Main Results:

  • Transport properties are sensitive to the relative angle of lead magnetizations.
  • Quantum interference effects arise from inter-lead coupling.
  • The inter-lead coupling strength can reverse current magnitudes and TMR sign, especially in the Coulomb blockade regime.
  • High inter-lead coupling leads to near-unity and near-zero spin polarization for parallel and antiparallel configurations, respectively.

Conclusions:

  • The relative angle of magnetization in ferromagnetic leads significantly impacts spin transport.
  • Inter-lead coupling offers a tunable parameter to control spin polarization and TMR.
  • This work provides insights for designing spintronic devices based on QD rings.