Freestanding HfO2 grating fabricated by fast atom beam etching
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Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System
Published on: July 18, 2015
Yongjin Wang1, Tong Wu, Yoshiaki Kanamori
1Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China. wyjjy@yahoo.com.
Abstract:
We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.
