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Related Experiment Video

Updated: May 31, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Reliable processing of graphene using metal etchmasks.

Shishir Kumar1, Nikos Peltekis, Kangho Lee

  • 1School of Chemistry, Trinity College Dublin, Ireland. duesberg@tcd.ie.

Nanoscale Research Letters
|June 30, 2011
PubMed
Summary

We developed a new metal etch mask for fabricating graphene electronic devices. This method improves graphene processability and reduces contamination, enabling reliable, high-throughput production of gated graphene devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Graphene's unique electronic properties make it promising for advanced electronic devices.
  • Reliable and scalable fabrication processes are essential for realizing graphene-based electronics.
  • Current graphene device fabrication methods face challenges with delamination and contamination.

Purpose of the Study:

  • To develop an improved method for patterning graphene films for electronic devices.
  • To address issues of delamination and contamination in graphene device fabrication.
  • To enable high-throughput production of high-quality gated graphene devices.

Main Methods:

  • Large-area chemical vapor deposition (CVD) synthesis and transfer of graphene films.

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

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Last Updated: May 31, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

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  • Development and application of a novel metal etch mask for graphene patterning.
  • Utilizing standard photoresist masks in conjunction with the metal etch mask.
  • Characterization using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical measurements.

    • Main Results:

    • Successful fabrication of arrays of gated graphene devices with four-point contacts.
    • The metal etch mask significantly minimized delamination and polymer residue contamination.
    • High-quality graphene films were confirmed through spectroscopic and electrical analyses.
    • Demonstrated improved processability of graphene using lithography and etching.

    Conclusions:

    • The developed metal etch mask technique enhances graphene device fabrication reliability and scalability.
    • This method facilitates the integration of graphene into high-throughput manufacturing processes for electronic applications.
    • The improved processability opens avenues for wider adoption of graphene in next-generation electronics.